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Current Enhancement and Bipolar Current Modulation of Top-Gate Transistors Based on Monolayer MoS2 on Three-Layer WxMo1–xS2
ACS Applied Materials & Interfaces ( IF 9.5 ) Pub Date : 2018-07-03 00:00:00 , DOI: 10.1021/acsami.8b06327
Kuan-Chao Chen,Cing-Yu Jian,Yi-Jia Chen,Si-Chen Lee,Shu-Wei Chang,Shih-Yen Lin

We demonstrated the top-gate transistors composed of monolayer MoS2 grown on three-layer alloys MoxW1–xS2 prepared by sequential sulfurization of predeposited transition metal films. The elemental mapping of the alloy indicates a uniform distribution of both cations Mo and W in the grown samples. Surprisingly, we find that the drain current of transistors could be enhanced by 2 orders of magnitude as the composition of Mo increases, whereas the gate-controlled current modulation turns bipolar and ultimately vanishes. These features might originate from the formation of in-gap defect states, with modest activation energy for transport and moderate hopping probability for current conduction, or a reduced electronic band gap of the conducting channel because of strain.

中文翻译:

三层W x Mo 1- x S 2上基于单层MoS 2的顶栅晶体管的电流增强和双极电流调制

我们展示了由在三层合金Mo x W 1– x S 2上生长的单层MoS 2组成的顶栅晶体管通过预硫化的过渡金属膜的顺序硫化制备。合金的元素图谱表明,在生长的样品中,阳离子Mo和W均分布均匀。出乎意料的是,我们发现随着Mo的成分增加,晶体管的漏极电流可以增加2个数量级,而栅极控制的电流调制变为双极型并最终消失。这些特征可能源自间隙内缺陷状态的形成,具有适度的激活能传输和适度的电流传导跳变概率,或者由于应变而减小了传导通道的电子带隙。
更新日期:2018-07-03
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