We investigated the atomic structure of inclined threading edge dislocation (TED) typically observed in GaN grown on Si(111) through (scanning) transmission electron microscopy. Atomic observations verified that the inclined TED consisted of two partial dislocations. These results imply that the inclined TED possesses a Ga–Ga atomic configuration that is energetically unfavorable. However, the introduction of such structures is considered unavoidable because the TEDs should climb regularly to mediate the applied stress or the increasing surface due to the buffer layer. This Ga–Ga configuration is highly likely to form metallic bonds and appears to be the primary reason for the inferior efficacy of a GaN light-emitting diode grown on Si(111).

中文翻译：

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异质外延GaN中金属Ga键的部分边缘位错

我们通过（扫描）透射电子显微镜研究了在Si（111）上生长的GaN中通常观察到的倾斜螺纹边缘位错（TED）的原子结构。原子观测结果证明倾斜的TED由两个部分位错组成。这些结果表明，倾斜的TED具有在能量上不利的Ga-Ga原子构型。然而，这种结构的引入被认为是不可避免的，因为TEDs应该规则地爬升以介导施加的应力或由于缓冲层而增加的表面。这种Ga-Ga构型极有可能形成金属键，这似乎是在Si（111）上生长的GaN发光二极管的效能较差的主要原因。