Silicon nanowall templates in nonporous and porous forms have been prepared by 4.8 M HF and 0.2 M H₂O₂ etching of lightly boron doped silicon (100) wafers at room temperature and their morphology, microstructure and visible photoluminescence properties were studied. Metal assisted chemical and metal assisted anodic polarization etching methods were used respectively to produce these morphologically distinct silicon nanowalls. It is shown from the analysis of photoluminescence results that porous silicon nanowalls emit red and orange radiation signals. This observation is in contrast with nonporous silicon nanowalls that did not show any visible luminescence features. The microscopy results revealed that pores and inter-pore Si regions in porous silicon nanowalls are interconnected in the form of skeletal morphology with quantum dimensions. Based on the temperature dependent luminescence results and the structure dimensions evaluated from the microscopy results, it is concluded that the red and orange emission in porous silicon nanowalls originates from silicon quantum structures and Si-O-Si bonded amorphous structures respectively. The effect of Si nanostructures and its dimensional dependence on photoluminescence properties in porous silicon nanowalls are also discussed. The synthesis and photoluminescence mechanism discussed in this work is very much useful for the development of silicon based functional porous materials for nanoscale devices application.

已通过4.8 M HF和0.2 M H ₂ O ₂制备了无孔和多孔形式的硅纳米墙模板研究了轻掺杂硼（100）硅片在室温下的腐蚀及其形貌，微观结构和可见光致发光性能。金属辅助化学和金属辅助阳极极化蚀刻方法分别用于产生这些形态上不同的硅纳米壁。从光致发光结果的分析表明，多孔硅纳米壁发射红色和橙色辐射信号。该观察结果与未显示任何可见发光特征的无孔硅纳米壁相反。显微镜结果表明，多孔硅纳米壁中的孔和孔间硅区域以具有量子尺寸的骨架形态的形式相互连接。根据与温度有关的发光结果和通过显微镜观察结果评估的结构尺寸，可以得出结论，多孔硅纳米壁中的红色和橙色发射分别源自硅量子结构和Si-O-Si键合的非晶结构。还讨论了硅纳米结构的影响及其尺寸依赖性对多孔硅纳米壁中光致发光性能的影响。在这项工作中讨论的合成和光致发光机理对于开发用于纳米级器件应用的硅基功能多孔材料非常有用。还讨论了硅纳米结构的影响及其尺寸依赖性对多孔硅纳米壁中光致发光性能的影响。在这项工作中讨论的合成和光致发光机理对于开发用于纳米级器件应用的硅基功能多孔材料非常有用。还讨论了硅纳米结构的影响及其尺寸依赖性对多孔硅纳米壁中光致发光性能的影响。在这项工作中讨论的合成和光致发光机理对于开发用于纳米级器件应用的硅基功能多孔材料非常有用。