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Organic–Inorganic Heterojunctions toward High‐Performance Ambipolar Field‐Effect Transistor Applications
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2018-06-28 , DOI: 10.1002/aelm.201800211
Molin Li 1, 2 , Jiawei Wang 1, 2 , Xiaoyong Cai 1 , Fengjing Liu 1, 2 , Xiaojun Li 1 , Liang Wang 1 , Lei Liao 3 , Chao Jiang 1
Affiliation  

This work reports on combination of organic–inorganic heterojunctions between amorphous indium–gallium–zinc oxide (a‐IGZO) and organic semiconductors for design of high‐performance ambipolar transistors. A vertically sequential layer device configuration that the organic small molecule dinaphtho‐thieno‐thiophene (DNTT) and dioctylbenzothieno[2,3‐b]benzothiophene (C8‐BTBT) are directly vacuum deposited on the surface of a‐IGZO without any interface modification is employed in ambipolar transistors. The ambipolar transistors based on C8‐BTBT/a‐IGZO featured with V‐shaped transfer curves exhibit an outstanding electrical performance with mobilities as high as 5.1 and 4.5 cm2 V−1 s−1 for electrons and holes, respectively. The formation of N‐type channel even if covered with several tens of nanometers thick small molecule film is clarified with the charge injection mechanisms based on both thermionic injection and/or tunneling transport processes. High‐performance ambipolar inverter with extremely large gain of 124 V/V is fabricated based on the C8‐BTBT/a‐IGZO ambipolar transistors. Moreover, a single‐transistor frequency doubler shows high spectral purity with 70% of the output energy at the doubling frequency of 2 kHz. The present work provides a strategy for manufacturing high‐performance ambipolar transistor with straightforward processing approaches, which may help deepen the understanding of ambipolar channel's working mechanisms and optimize the design procedures of logic electrical components.

中文翻译:

高性能双极性场效应晶体管应用的有机-无机异质结

这项工作报告了非晶铟-镓-氧化锌(a-IGZO)与有机半导体之间的有机-无机异质结的组合,用于高性能双极性晶体管的设计。有沿上下方向连续的层的设备配置的是有机小分子二萘并噻吩并噻吩(DNTT)和dioctylbenzothieno [2,3- b ]苯并噻吩(C8-BTBT)直接真空的a-IGZO的表面上沉积而没有任何界面修改是用于双极晶体管。基于C8-BTBT / a-IGZO的双极性晶体管具有V形传输曲线,具有出色的电气性能,迁移率高达5.1和4.5 cm 2 V -1 s -1分别用于电子和空穴。即使基于几十个纳米厚的小分子薄膜覆盖,N型通道的形成也可以通过基于热电子注入和/或隧穿传输过程的电荷注入机理得以阐明。基于C8-BTBT / a-IGZO双极性晶体管制造了具有124 V / V极高增益的高性能双极性逆变器。此外,单晶体管倍频器在2 kHz的倍频下显示出高频谱纯度,并具有70%的输出能量。本工作为采用直接处理方法制造高性能双极性晶体管提供了一种策略,这可能有助于加深对双极性通道工作机制的理解,并优化逻辑电气组件的设计程序。
更新日期:2018-06-28
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