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Vapor‐Coated Monofilament Fibers for Embroidered Electrochemical Transistor Arrays on Fabrics
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2018-06-28 , DOI: 10.1002/aelm.201800271
Lushuai Zhang 1 , Trisha Andrew 1
Affiliation  

Fiber‐based electrochemical transistors can be embroidered onto fabrics for wearable and implantable bioelectronics. However, the active channel length of known fiber‐based electrochemical transistors is defined by the dynamic contact area between the conductive fiber and a liquid electrolyte, meaning that existing iterations cannot be reliably operated upon immersion in biological media. A proof‐of‐concept parallel‐junction electrochemical transistor on a silk fabric with a fixed, micrometer‐sized channel length that is independent of electrolyte contact area is reported. A high on/off ratio of 1000, and notable transconductance value of 100 µS at zero gate voltage and low applied drain bias (0.7 V) is obtained, making this device amenable to subsequent incorporation into low‐power‐consuming integrated circuits. Large‐area arrays of this transistor can be rapidly created by straight‐stitching a monofilament fiber channel onto a fabric substrate, meaning that simple embroidery approaches can be used to fabricate spatially resolved electrode arrays for electrophysiological applications.

中文翻译:

织物上绣有电化学晶体管阵列的气相包覆单丝纤维

可以将基于纤维的电化学晶体管绣在用于可穿戴和可植入生物电子学的织物上。但是,已知的基于纤维的电化学晶体管的有效通道长度是由导电纤维与液体电解质之间的动态接触面积定义的,这意味着现有的迭代在浸入生物介质后无法可靠地进行操作。报告了在丝织物上具有概念证明的平行结电化学晶体管,该晶体管具有固定的,微米级的沟道长度,而沟道长度与电解质的接触面积无关。在零栅极电压和低施加漏极偏置(0.7 V)的情况下,可获得1000的高开/关比和100 µS的显着跨导值,使该器件可随后集成到低功耗集成电路中。
更新日期:2018-06-28
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