We present gate-controlled single-, double-, and triple-dot operation in electrostatically gapped bilayer graphene. Thanks to the recent advancements in sample fabrication, which include the encapsulation of bilayer graphene in hexagonal boron nitride and the use of graphite gates, it has become possible to electrostatically confine carriers in bilayer graphene and to completely pinch-off current through quantum dot devices. Here, we discuss the operation and characterization of electron–hole double dots. We show a remarkable degree of control of our device, which allows the implementation of two different gate-defined electron–hole double-dot systems with very similar energy scales. In the single-dot regime, we extract excited state energies and investigate their evolution in a parallel magnetic field, which is in agreement with a Zeeman-spin-splitting expected for a g-factor of 2.

中文翻译：

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双层石墨烯中的栅极定义的电子-空穴双点

我们介绍了在静电间隙双层石墨烯中由栅极控制的单点，双点和三点操作。得益于样品制造的最新进展，其中包括在六方氮化硼中封装双层石墨烯和使用石墨栅极，从而有可能将载流子静电限制在双层石墨烯中，并完全切断通过量子点器件的电流。在这里，我们讨论电子-空穴双点的操作和特征。我们展示了对设备的卓越控制，它可以实现两个非常相似的能级的不同门定义的电子-空穴双点系统。在单点状态下，我们提取激发态能量，并研究它们在平行磁场中的演化，g因子为2。