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High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy
Advanced Science ( IF 15.1 ) Pub Date : 2018-06-27 , DOI: 10.1002/advs.201800844
Tao Wang 1, 2 , Xinqiang Wang 1, 3 , Zhaoying Chen 1 , Xiaoxiao Sun 1 , Ping Wang 1 , Xiantong Zheng 1 , Xin Rong 1 , Liuyun Yang 1 , Weiwei Guo 1 , Ding Wang 1, 4 , Jianpeng Cheng 1 , Xi Lin 3 , Peng Li 2 , Jun Li 2 , Xin He 2 , Qiang Zhang 2 , Mo Li 4 , Jian Zhang 4 , Xuelin Yang 1 , Fujun Xu 1 , Weikun Ge 1 , Xixiang Zhang 2 , Bo Shen 1, 3
Affiliation  

Due to the intrinsic spontaneous and piezoelectric polarization effect, III‐nitride semiconductor heterostructures are promising candidates for generating 2D electron gas (2DEG) system. Among III‐nitrides, InN is predicted to be the best conductive‐channel material because its electrons have the smallest effective mass and it exhibits large band offsets at the heterointerface of GaN/InN or AlN/InN. Until now, that prediction has remained theoretical, due to a giant gap between the optimal growth windows of InN and GaN, and the difficult epitaxial growth of InN in general. The experimental realization of 2DEG at an InGaN/InN heterointerface grown by molecular beam epitaxy is reported here. The directly probed electron mobility and the sheet electron density of the InGaN/InN heterostructure are determined by Hall‐effect measurements at room temperature to be 2.29 × 103 cm2 V−1 s−1 and 2.14 × 1013 cm−2, respectively, including contribution from the InN bottom layer. The Shubnikov–de Haas results at 3 K confirm that the 2DEG has an electron density of 3.30 × 1012 cm−2 and a quantum mobility of 1.48 × 103 cm2 V−1 s−1. The experimental observations of 2DEG at the InGaN/InN heterointerface have paved the way for fabricating higher‐speed transistors based on an InN channel.

中文翻译:

分子束外延生长的InGaN / InN异质界面上的高迁移率二维电子气

由于固有的自发和压电极化效应,III族氮化物半导体异质结构是产生2D电子气(2DEG)系统的有希望的候选者。在三族氮化物中,InN被认为是最好的导电沟道材料,因为它的电子具有最小的有效质量,并且在GaN / InN或AlN / InN的异质界面处表现出较大的能带偏移。到目前为止,由于InN和GaN的最佳生长窗口之间的巨大差距以及InN通常很难进行外延生长,因此该预测仍然是理论上的。本文报道了分子束外延生长在InGaN / InN异质界面上2DEG的实验实现。3厘米2 V -1小号-1和2.14×10 13厘米-2,分别包括从InN的底层的贡献。Shubnikov-de Haas在3 K下的结果证实了2DEG的电子密度为3.30×10 12 cm -2,量子迁移率为1.48×10 3 cm 2 V -1 s -1。在InGaN / InN异质界面上进行2DEG的实验观察,为基于InN沟道制造更高速度的晶体管铺平了道路。
更新日期:2018-06-27
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