Abstract Si1-xGex (0≤x≤1) thin films were deposited by means of biased target ion beam sputtering at a low substrate temperature near 100 °C inside a vacuum chamber. The as-deposited films were all found to be amorphous and to be compressively stressed, and the magnitude of the compressive stress was found to decrease with increasing Ge content. Heat treatment for 30 min under vacuum conditions in the range from 100 °C to 800 °C was found to relax the compressive stress and to eventually cause crystallisation of the films at higher temperatures. The temperature required to achieve full stress relaxation was found to decrease with increasing Ge content, and to be well below that for film crystallisation. Annealing at temperatures above the crystallisation temperature caused physical damage to films containing >50 at.% Ge. Films with

中文翻译：

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热退火对离子束溅射非晶Si 1-x Ge x 薄膜应力松弛和结晶的影响

摘要 Si1-xGex (0≤x≤1) 薄膜是在真空室内接近 100 °C 的低衬底温度下通过偏置靶离子束溅射沉积的。发现沉积的薄膜都是无定形的并受到压应力，并且发现压应力的大小随着 Ge 含量的增加而减小。发现在 100°C 至 800°C 的真空条件下热处理 30 分钟可放松压缩应力并最终导致薄膜在较高温度下结晶。发现实现完全应力松弛所需的温度随着 Ge 含量的增加而降低，并且远低于薄膜结晶的温度。在高于结晶温度的温度下退火会对含有 >50 at.% Ge 的薄膜造成物理损坏。电影