In this paper, a physically-based model was adapted to P-type organic thin-film transistors (P-OTFTs) by describing the accumulation charge with a Lambert W (LW) function in order to extract their figures of merit as threshold voltage, low-field mobility and subthreshold slope related to the interface traps density. This continuous and differentiable model, implemented for the first time on OTFTs, allows an accurate evaluation of the output and transfer characteristics, reproducing well the OTFT behaviour below and above the threshold region. Additionally, it was validated for different channel lengths (from 10 to 100 μm), taking into account short-channel effects. This model was also used to extract the parameters of P-OTFTs measured at low temperatures, showing a thermally activated transport in the polymer organic semiconductor (OSC) with an effective width of localized states around 90 meV and a relatively high band-like mobility. We also showed that the evolution of the threshold voltage versus temperature was related to the electrostatic effect of the interface trapped charge. The comparison between classical extraction methods and our LW-function based method validated the application of our model to P-OTFTs parameters extraction, opening a possibility for compact modelling.

在本文中，基于物理模型适用于P型有机薄膜晶体管（P-OTFT），方法是使用Lambert W（LW）函数描述累积电荷，以提取其品质因数作为阈值电压，与界面陷阱密度有关的低场迁移率和亚阈值斜率。首次在OTFT上实现的这种连续且可微分的模型允许对输出和传输特性进行准确的评估，从而很好地再现阈值区域以下和之上的OTFT行为。此外，考虑到短通道效应，已针对不同的通道长度（从10至100μm）进行了验证。该模型还用于提取在低温下测得的P-OTFT的参数，显示了在聚合物有机半导体（OSC）中的热激活传输，其中有效态的局部态宽度约为90 meV，具有相对较高的带状迁移率。我们还表明，阈值电压随温度的变化与界面俘获电荷的静电效应有关。经典提取方法和基于LW函数的方法之间的比较验证了我们的模型在P-OTFTs参数提取中的应用，为紧凑建模提供了可能性。