Abstract The influence of stress-induced martensite ageing (SIM-ageing) on the two-way shape memory effect (TWSME) in Ni53Mn25Ga22 (at.%) single crystals was studied. The most effective regime of SIM-ageing (423 K, 175 MPa, 2–3 h) inducing the compressive TWSME with the strain of 3.6 (±0.2)% was established. The stability of the TWSME was investigated at thermal cycling through the temperature interval of martensitic transformations with and without overheating above the SIM-ageing temperature of 423 K. The TWSME strain does not decrease considerably during stress-free thermal cycling. In contrast, overheating above the SIM-ageing temperature on 30 K results in decreasing the TWSME strain down to 1.2%.

中文翻译：

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应力诱导马氏体时效对Ni 53 Mn 25 Ga 22 单晶双向形状记忆效应的影响

摘要 研究了应力诱导马氏体时效 (SIM-ageing) 对 Ni53Mn25Ga22 (at.%) 单晶双向形状记忆效应 (TWSME) 的影响。建立了最有效的 SIM 时效机制（423 K，175 MPa，2-3 小时），以 3.6 (±0.2)% 的应变诱导压缩 TWSME。TWSME 的稳定性在通过马氏体转变温度区间的热循环中进行研究，在 SIM 时效温度 423 K 以上过热和没有过热。 TWSME 应变在无应力热循环期间不会显着降低。相比之下，在 30 K 的 SIM 时效温度以上过热会导致 TWSME 应变降低至 1.2%。