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Bulk Phosphorus-Doped Graphitic Carbon
Chemistry of Materials ( IF 8.6 ) Pub Date : 2018-06-22 00:00:00 , DOI: 10.1021/acs.chemmater.8b00944
Emanuel Billeter 1, 2 , Devin McGlamery 1 , Marcel Aebli 2 , Laura Piveteau 2 , Maksym V. Kovalenko 2, 3 , Nicholas P. Stadie 1
Affiliation  

A direct synthetic route to a tunable range of phosphorus-doped graphitic carbon materials is demonstrated via the reaction of benzene and phosphorus trichloride in a closed reactor at elevated temperatures (800–1050 °C). Graphitic materials of continuously variable composition PCx up to a limit of approximately x = 5 are accessible, where phosphorus is incorporated both substitutionally within the graphite lattice and as stabilized P4 molecules. Higher temperatures result in a more ordered graphitic lattice, while the maximum phosphorus content is not observed to diminish. Lower temperatures and higher initial phosphorus content in the reaction mixture are shown to correlate with higher structural disorder. Phosphorus incorporation within directly synthesized PCx, as both a substitutional dopant and in the form of interstitial, stabilized molecular P4, is demonstrated to occur with little oxygen contamination in the bulk (<4 atom %), motivating promising future applications in fuel cells and alkali metal-ion batteries.

中文翻译:

大块掺磷石墨碳

通过苯和三氯化磷在密闭反应器中在升高的温度(800-1050°C)下反应,证明了直接合成途径可调谐范围内的磷掺杂石墨碳材料。可以访问组成连续变化的PC x的石墨材料,其极限值约为x = 5,其中磷既可以替代地结合到石墨晶格中,也可以作为稳定化的P 4引入。分子。较高的温度导致石墨晶格更有序,而未观察到最大磷含量减少。反应混合物中较低的温度和较高的初始磷含量显示与较高的结构无序相关。事实证明,直接合成的PC x中的磷掺入既作为替代掺杂剂,又以间隙稳定分子P 4的形式发生,且本体中的氧污染极小(<4原子%),这激发了未来在燃料电池中的应用前景和碱金属离子电池。
更新日期:2018-06-22
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