Photocorrosion is a key factor that greatly hinders the stability of photoanodes. Depositing appropriate cocatalysts can effectively protect the semiconductors from photocorrosion as well as improve the photoelectrochemical (PEC) activity. However, the formation of cocatalysts occurs mostly under island growth, making the semiconductors partially unprotected, thus leading to poor stability. Herein, we demonstrate the complex assembly film composed of phenolic ligands (tannic acid) coordinated with Ni and Fe ions (TANF) as a robust cocatalyst for Mo-doped BiVO₄ (Mo:BiVO₄@TANF) toward PEC water oxidation. The photocurrent density of Mo:BiVO₄@TANF at 1.23 V versus reversible hydrogen electrode (RHE) reaches a value of 5.10 ± 0.13 mA cm^–2. Furthermore, because the complete coverage of the TANF film can effectively protect the semiconductor from photocorrosion, 92% photocurrent of the integrated photoanode is retained after operating at harsh 1.23 V vs RHE for 3 h. The outstanding activity and stability of the integrated photoanode surpass those of many existing cocatalysts such as ferrihydrite (Fh) and cobalt phosphate (Co-Pi). In addition, the TANF cocatalyts can be also applied to other semiconductors (nondoped BiVO₄ and TiO₂), indicating the TANF is a promising cocatalyst alternative for solar energy conversion.

中文翻译：

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通过NiFe-酚醛网络的均匀组装涂层提高Mo掺杂的BiVO _4的光电化学水氧化活性和稳定性

光腐蚀是大大阻碍光阳极稳定性的关键因素。沉积合适的助催化剂可以有效保护半导体免受光腐蚀，并提高光电化学（PEC）活性。然而，助催化剂的形成主要在岛生长下发生，从而使半导体部分不受保护，从而导致稳定性差。在这里，我们展示了由酚配体（鞣酸）与镍和铁离子（TANF）配位的复合组装膜，该复合膜是Mo掺杂BiVO ₄（Mo：BiVO ₄ @TANF）对PEC水氧化的稳健助催化剂。Mo：BiVO ₄ @TANF在1.23 V时相对于可逆氢电极（RHE）的光电流密度达到5.10±0.13 mA cm ^–2的值。此外，由于TANF膜的完全覆盖可以有效地保护半导体免受光腐蚀，因此在1.23 V vs. RHE的苛刻条件下运行3小时后，集成光电阳极的92％光电流得以保留。集成光阳极的出色活性和稳定性超过了许多现有的助催化剂，例如三水铁矿（Fh）和磷酸钴（Co-Pi）。此外，TANF助催化剂还可以应用于其他半导体（未掺杂的BiVO ₄和TiO ₂），这表明TANF是太阳能转化的有前途的助催化剂替代品。