Abstract The microstructure morphology and crystal quality of CsI(Tl) films are influenced by the crystal properties of substrates. In this work, CsI(Tl) films on the glass and single crystal silicon substrates are fabricated by vacuum thermal evaporation at a low deposition rate. The microstructure morphology, crystalline quality and scintillation properties of the films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. To study the growth mechanism of CsI(Tl) films on amorphous and monocrystalline substrates, a growth model based on the classical Volmer-Weber (VW) growth mode are proposed. During the film growing, the wetting and not-wetting phenomena of the clusters appear on the glass and Si(1 1 1) substrates respectively. In addition, the microcrystalline columns with different orientations are modeled to explain the surface morphology deteriorate of the CsI(Tl) film with 3 μm thickness on Si(1 1 1) substrate.

中文翻译：

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玻璃和单晶硅衬底上多晶 CsI(Tl) 薄膜的生长机制

摘要 CsI(Tl)薄膜的微观结构形貌和晶体质量受衬底晶体性质的影响。在这项工作中，玻璃和单晶硅衬底上的 CsI(Tl) 薄膜是通过真空热蒸发以低沉积速率制造的。通过使用扫描电子显微镜、X 射线衍射、光致发光和辐射发光光谱检查薄膜的微观结构形貌、结晶质量和闪烁性能。为了研究非晶和单晶衬底上 CsI(Tl) 薄膜的生长机制，提出了一种基于经典 Volmer-Weber (VW) 生长模式的生长模型。在薄膜生长过程中，团簇的润湿和不润湿现象分别出现在玻璃和Si(1 1 1)衬底上。此外，