Room temperature electron mobility of >100 cm² V^–1 s^–1 is achieved for a few-layer MoS₂ transistor by use of a polyanionic proton conductor as the top-gate dielectric of the device. The use of a proton conductor that inherently exhibits a cationic transport number close to 1 yields unipolar electron transport in the MoS₂ channel. The high mobility value is attributed to the effective formation of an electric double layer by the proton conductor, which facilitates electron injection into the MoS₂ channel, and to the effective screening of the charged impurities in the vicinity of the device channel. Through careful temperature-dependent transistor and capacitor measurements, we also confirm quenching of the phonon modes in the proton-conductor-gated MoS₂ channel, which should also contribute to the achieved high mobility. These devices are then used to assemble a simple resistive-load inverter logic circuit, which can be switched at high frequencies above 1 kHz.

中文翻译：

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质子导体门控的MoS ₂晶体管，室温电子迁移率> 100 cm ² V ^–1 s ^–1

通过使用聚阴离子质子导体作为器件的顶栅电介质，可对几层MoS ₂晶体管实现室温电子迁移率> 100 cm ² V ^–1 s ^–1。固有地表现出接近1的阳离子传输数的质子导体的使用会在MoS ₂通道中产生单极电子传输。高迁移率值归因于质子导体有效地形成双电层，这有助于电子注入到MoS _2中通道，并有效筛选设备通道附近的带电杂质。通过仔细的温度相关晶体管和电容器测量，我们还确认了质子导体门控MoS ₂通道中声子模的猝灭，这也应有助于实现高迁移率。然后，这些设备用于组装简单的电阻负载逆变器逻辑电路，该电路可以在高于1 kHz的高频下进行切换。