Aluminum nitride (AlN) thin films are widely investigated due to their unique physical properties and applications in energy harvesting devices, ultrasonic transducers, microelectronics, high-frequency wide band communications, and power semiconductor devices. This article reviews recent studies of AlN structures, focusing on their fabrication and novel applications. Various fabrication techniques used to synthesize AlN films are discussed, along with their growth mechanisms and crystal structure. The physical properties of AlN films are summarized, including their mechanical and electrical properties (in particular the piezoelectric behavior). Finally, the application of AlN thin films in the fields of energy harvesting and acoustic devices is discussed in detail. Furthermore, this review proposes perspectives for future development of AlN thin films.

氮化铝（AlN）薄膜由于其独特的物理特性以及在能量收集设备，超声换能器，微电子，高频宽带通信和功率半导体设备中的应用而受到广泛研究。本文回顾了AlN结构的最新研究，重点是AlN结构的制造和新颖的应用。讨论了用于合成AlN膜的各种制造技术，以及它们的生长机理和晶体结构。总结了AlN薄膜的物理特性，包括其机械和电气特性（特别是压电特性）。最后，详细讨论了AlN薄膜在能量收集和声学设备领域中的应用。此外，