Redox-based resistive switching memories (ReRAMs) are the strongest candidates for next generation nonvolatile memories. These devices are commonly composed of metal/solid electrolyte/metal junctions, where the solid electrolyte is usually an oxide layer. A key aspect in the ReRAMs development is the solid electrolyte engineering, since it is crucial to tailor the material properties for obtaining excellent switching properties (e.g. retention, endurance, etc.). Here we present an anodizing process as a non vacuum and low temperature electrochemical technique for growing oxides with tailored structural and electronic properties. The effect of the anodizing conditions on the solid state properties of the anodic oxides is studied in relation to the final ReRAM device performances demonstrating the great potentiality of this technique to produce high quality oxide thin films for resistive switching memories.

中文翻译：

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电化学制备的用于电阻式开关存储器的氧化物

基于氧化还原的电阻式开关存储器（ReRAM）是下一代非易失性存储器的最强候选者。这些装置通常由金属/固体电解质/金属结组成，其中固体电解质通常是氧化物层。ReRAMs开发中的一个关键方面是固体电解质工程，因为定制材料属性对于获得出色的开关性能（例如保持力，耐力等）至关重要。）。在这里，我们提出一种阳极氧化工艺，作为一种非真空和低温电化学技术，用于生长具有定制结构和电子性能的氧化物。结合最终的ReRAM器件性能研究了阳极氧化条件对阳极氧化物固态性能的影响，证明了该技术在生产用于电阻开关存储器的高质量氧化物薄膜方面的巨大潜力。