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High Thermo-Optic Coefficient of Silicon Oxycarbide Photonic Waveguides
ACS Photonics ( IF 7 ) Pub Date : 2018-06-15 00:00:00 , DOI: 10.1021/acsphotonics.8b00512
Faisal Ahmed Memon 1, 2 , Francesco Morichetti 1 , Andrea Melloni 1
Affiliation  

In this Letter, we report on the observation of a high thermo-optic coefficient (TOC) of silicon oxycarbide (SiOC) films deposited by reactive RF magnetron sputtering for integrated photonic waveguides. In the 1550 nm wavelength range, the measured TOC of SiOC is as large as 2.5 × 10–4 RIU °C–1, which is about 30 times larger than that of silica and almost twice that of silicon. Thin films of SiOC have been integrated in germanium-doped silica and silicon oxynitride conventional waveguide technology, achieving a 10× and 3× enhancement of the waveguide effective TOC, respectively. These results demonstrate the potential of SiOC for the realization of highly efficient phase actuators and low-power-consumption thermally tunable photonic integrated platforms.

中文翻译:

碳化硅光子波导的高热光系数

在这封信中,我们报告了通过反应性射频磁控溅射沉积用于集成光子波导的碳氧化硅(SiOC)膜的高热光系数(TOC)的观察结果。在1550 nm波长范围内,SiOC的测得的TOC高达2.5×10 –4 RIU°C –1,这大约是二氧化硅的30倍,几乎是硅的两倍。SiOC薄膜已集成在掺锗的二氧化硅和氧氮化硅常规波导技术中,分别实现了10倍和3倍的波导有效TOC增强。这些结果证明了SiOC在实现高效相位致动器和低功耗热可调光子集成平台方面的潜力。
更新日期:2018-06-15
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