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Photocarrier Transfer across Monolayer MoS2–MoSe2 Lateral Heterojunctions
ACS Nano ( IF 17.1 ) Pub Date : 2018-06-15 00:00:00 , DOI: 10.1021/acsnano.8b02843
Matthew Z. Bellus 1 , Masoud Mahjouri-Samani 2, 3 , Samuel D. Lane 1 , Akinola D. Oyedele 2, 4 , Xufan Li 2 , Alexander A. Puretzky 2 , David Geohegan 2 , Kai Xiao 2 , Hui Zhao 1
Affiliation  

In-plane heterojuctions formed from two monolayer semiconductors represent the finest control of electrons in condensed matter and have attracted significant interest. Various device studies have shown the effectiveness of such structures to control electronic processes, illustrating their potentials for electronic and optoelectronic applications. However, information about the physical mechanisms of charge carrier transfer across the junctions is still rare, mainly due to the lack of adequate experimental techniques. Here we show that transient absorption measurements with high spatial and temporal resolution can be used to directly monitor such transfer processes. We studied MoS2–MoSe2 in-plane heterostructures fabricated by chemical vapor deposition and lithographic patterning followed by laser-generated vapor sulfurization. Transient absorption measurements in reflection geometry revealed evidence of exciton transfer from MoS2 to MoSe2. By comparing the experimental data with a simulation, we extracted an exciton transfer velocity of 104 m s–1. These results provide valuable information for understanding and controlling in-plane carrier transfer in two-dimensional lateral heterostructures for their electronic and optoelectronic applications.

中文翻译:

跨单层MoS 2 -MoSe 2横向异质结的光电载流子转移

由两个单层半导体形成的面内异质结代表了对凝聚态电子的最佳控制,并引起了人们的极大兴趣。各种设备研究表明,这种结构控制电子过程的有效性,说明了其在电子和光电应用中的潜力。然而,有关电荷载流子跨结转移的物理机制的信息仍然很少,主要是由于缺乏适当的实验技术。在这里,我们表明具有高空间和时间分辨率的瞬态吸收测量可用于直接监测此类转移过程。我们研究了MoS 2 –MoSe 2通过化学气相沉积和光刻构图,然后进行激光生成的蒸气硫化,制造出平面内异质结构。在反射几何瞬态吸收测量显示从硫化钼激子转移的证据2至摩西2。通过将实验数据与仿真结果进行比较,我们得出了10 4 ms –1的激子传递速度。这些结果为理解和控制二维横向异质结构在电子和光电应用中的面内载流子转移提供了有价值的信息。
更新日期:2018-06-15
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