The electrical stabilities of n-type Organic Field-Effect Transistors (OFETs) based on dihydroindeno[1,2-b]fluorene and dihydroindeno[2,1-b]fluorene derivatives have been studied. These OFETs incorporate epoxy-based photoresist SU-8 as the gate insulator. The comparison of the electrical stability through gate bias stress measurements as a function of voltage and temperature stress shows that the instabilities of these OFETs result from different phenomena. Different models have been used to analyse the instabilities of the devices and these are discussed. As the two molecules only differ by their geometry and their substitution, this study shows how slight structural modifications of the semiconductor molecular structure induce electrical instabilities in the corresponding OFETs arising from different features.

中文翻译：

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栅极偏置应力对基于双氰基亚乙烯基-二氢茚并芴半导体的n型有机场效应晶体管的稳定性的影响†

基于二氢茚并[1,2- n型有机场效应晶体管（OFET）的电稳定性b ]芴和二氢茚并[2,1- b对]芴衍生物进行了研究。这些OFET结合了基于环氧的光致抗蚀剂SU-8作为栅极绝缘体。通过栅极偏置应力测量值作为电压和温度应力函数的电稳定性比较表明，这些OFET的不稳定性是由不同现象引起的。已经使用了不同的模型来分析设备的不稳定性，并对其进行了讨论。由于这两种分子仅在几何形状和取代方面有所不同，所以这项研究表明，半导体分子结构的轻微结构修饰如何在相应的OFET中引起由不同特征引起的电不稳定性。