Electric control of exchange bias (EB) is of vital importance in energy‐efficient spintronics. Although many attempts have been made during the past decade, each has its own limitations for operation and thus falls short of full direct and reversible electrical control of EB at room temperature. Here, a novel approach is proposed by virtue of unipolar resistive switching to accomplish this task in a Si/SiO₂/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in the high‐resistance‐state while negligible EB in the low‐resistance state. Conductive filaments forming in the NiO layer and rupturing near the Co–NiO interface are considered to play dominant roles in determining the combined resistive switching and EB phenomena. This work paves a new way for designing multifunctional and nonvolatile magnetoelectric random access memory devices.

中文翻译：

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通过电阻开关对室温下的交流偏置进行全电控制

交流偏置（EB）的电子控制在节能型自旋电子学中至关重要。尽管在过去的十年中进行了许多尝试，但每种尝试都有其自身的操作局限性，因此无法达到在室温下对EB进行完全直接和可逆的电气控制的目的。在这里，提出了一种新颖的方法，借助单极电阻切换在Si / SiO _2中完成此任务/ Pt / Co / NiO / Pt设备。通过施加一定的电压，该器件在高电阻状态下显示明显的EB，而在低电阻状态下显示可忽略的EB。导电细丝在NiO层中形成并在Co-NiO界面附近破裂，被认为在确定组合的电阻开关和EB现象中起主要作用。这项工作为设计多功能和非易失性磁电随机存取存储设备开辟了一条新途径。