Silicon telluride (Si₂Te₃) is a two-dimensional, layered, p-type semiconductor that shows broad near-infrared photoluminescence. We show how, through various means of chemical modification, Si₂Te₃ can have its optoelectronic properties modified in several independent ways without fundamentally altering the host crystalline lattice. Substitutional doping with Ge strongly red-shifts the photoluminescence while substantially lowering the direct and indirect band gaps and altering the optical phonon modes. Intercalation with Ge introduces a sharp 4.3 eV ultraviolet resonance and shifts the bulk plasmon even while leaving the infrared response and band gaps virtually unchanged. Intercalation with copper strengthens the photoluminescence without altering its spectral shape. Thus, silicon telluride is shown to be a chemically tunable platform of full spectrum optical properties promising for optoelectronic applications.

中文翻译：

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2D碲化硅纳米板的化学可调全光谱光学性质

碲化硅（Si ₂ Te ₃）是二维的层状p型半导体，具有宽泛的近红外光致发光特性。我们展示了如何通过各种化学修饰手段来实现Si ₂ Te ₃可以从根本上不改变主体晶格的几种独立方式修改其光电性能。用Ge取代掺杂强烈地使光致发光发生红移，同时显着降低了直接和间接带隙并改变了光子的声子模。与Ge的插入会引入尖锐的4.3 eV紫外线共振，甚至在保持红外响应和带隙基本不变的情况下，也会改变整体等离激元。与铜的插层可增强光致发光，而不会改变其光谱形状。因此，碲化硅被证明是有希望用于光电应用的具有全光谱光学特性的化学可调平台。