Sulfur-doped graphene quantum dots (S-GQDs) were synthesized by two facile hydrothermal technologies. The photoluminescence (PL) properties of the GQDs and S-GQDs samples were mainly investigated. Through regulating the content of S powders in S-GQDs synthesizing process, the optimal S-GQDs have a high S/C atomic ratio of 19.53%. The S doping introduce more functional groups on the C sp² skeleton of S-3 sample and result in the appearance of the strong absorption band in the UV region. In comparison with other reported S-GQDs, the S-GQDs exhibit overwhelming high fluorescence quantum yield (57%) and excitation-independent emission, resulting from the outcome of the doped sulfur atoms. Moreover, the PL intensity of GQDs can be increased by doping it with S and the increasing efficiency depends on the thiophene sulfur content.

通过两种简便的水热技术合成了硫掺杂的石墨烯量子点（S-GQDs）。主要研究了GQD和S-GQD样品的光致发光（PL）特性。通过调节S-GQDs合成过程中S粉的含量，最佳S-GQDs的S / C原子比高，为19.53％。S掺杂会在C sp ²上引入更多的官能团S-3样品的骨架，导致在UV区出现强吸收带。与其他已报道的S-GQD相比，S-GQD表现出压倒性的高荧光量子产率（57％）和不依赖激发的发射，这是由掺杂的硫原子产生的结果。此外，可以通过在GQD中掺杂S来提高其PL强度，而提高的效率取决于噻吩的硫含量。