Abstract InAsSb epilayers grown on GaAs substrates by molecular beam epitaxy have been studied using X-ray diffraction and Raman scattering. X-ray diffraction was used to determine the mole fraction of presented samples. In Raman spectrum, we analyzed for each sample not only the position of LO InAs and InSb phonons but also intensities of those. We found correlation between intensities ratio of LO phonons and the mole fraction of measured samples and we proposed a method how to calculate InAsSb mole fraction only using Raman spectroscopy.

中文翻译：

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x <0.5 时 InAsSb 摩尔分数的 X 射线和拉曼测定

摘要 使用 X 射线衍射和拉曼散射研究了通过分子束外延在 GaAs 衬底上生长的 InAsSb 外延层。X 射线衍射用于确定所呈现样品的摩尔分数。在拉曼光谱中，我们不仅分析了每个样品的 LO InAs 和 InSb 声子的位置，还分析了它们的强度。我们发现 LO 声子的强度比与测量样品的摩尔分数之间存在相关性，我们提出了一种仅使用拉曼光谱计算 InAsSb 摩尔分数的方法。