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Potentiometric Parameterization of Dinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene Field‐Effect Transistors with a Varying Degree of Nonidealities
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2018-05-31 , DOI: 10.1002/aelm.201700514
Chang-Hyun Kim 1 , Suzanne Thomas 2 , Ji Hwan Kim 1 , Martin Elliott 2 , J. Emyr Macdonald 2 , Myung-Han Yoon 1
Affiliation  

Organic transistors with different structures are investigated to address the applicability and reliability of parameter extraction. A dinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene channel is coupled with pristine or functionalized gold bottom and top contacts to reveal a geometrical impact on the device performance and nonidealities. Scanning Kelvin probe microscopy is employed as a key method to quantify the channel and contact potential in operation. Taking full account of the contact effects and including an explicit threshold voltage in calculation are shown to be critical to access the intrinsic carrier mobility, while simple derivative‐based extraction may over‐ or underestimate it. Further analytical developments correlate individual physical parameters, leading to the discovery that pentafluorobenzenethiol self‐assembled on gold predominantly affects the carrier mobility rather than the injection barrier.

中文翻译:

非理想度变化的Dinaphtho [2,3-b:2′,3'-f] thieno [3,2-b]噻吩场效应晶体管的电位参数化

研究了具有不同结构的有机晶体管,以解决参数提取的适用性和可靠性。dinaphtho [2,3-b:2',3'-f] thieno [3,2-b]噻吩通道与原始的或功能化的金底部和顶部触点耦合,以揭示对器件性能和非理想性的几何影响。扫描开尔文探针显微镜被用作量化操作中通道和接触电势的关键方法。研究表明,充分考虑接触效应并在计算中包括显式阈值电压对于访问固有载流子迁移率至关重要,而简单的基于导数的提取可能会高估或低估它。进一步的分析发展将各个物理参数相关联,
更新日期:2018-05-31
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