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Hydrothermal assisted chemical bath deposition of (Cd:Zn)S thin film with high photosensitivity and low dark current
Solar Energy ( IF 6.7 ) Pub Date : 2018-09-01 , DOI: 10.1016/j.solener.2018.05.075 Joissy Mathew , E.I. Anila
Solar Energy ( IF 6.7 ) Pub Date : 2018-09-01 , DOI: 10.1016/j.solener.2018.05.075 Joissy Mathew , E.I. Anila
Abstract In this work we observed high-quality nanocrystalline ternary films obtained by hydrothermal assisted chemical bath deposition on glass substrates. Deposition has been carried out at 200 °C for one hour. The alloying effect and the photoelectric properties of the material is enumerated in this paper along with the structural, Optical, morphological and photoluminescence properties. The structural properties analysed by X-ray diffraction (XRD) reveals the hexagonal phase of CdZnS film with preferred orientation along the (1 0 0) plane and the average grain size was observed to be 28 nm. Scanning electron microscopy (SEM) images showed clusters of nanofibers grown on the film. The optical bandgap obtained from the optical absorption studies using UV–Vis-NIR spectroscopy was 2.98 eV. Broad and asymmetric emission from intrinsic point defects was observed in the PL spectrum recorded using Fluromax-4Spectrofluorometer. The photoconductivity of the film was investigated by using Keithley SMU2450 four probe source measure unit under illumination by light from 300 W/82 V halogen lamp. In the dark condition, the I–V Curve showed non-linear behaviour, whereas the film showed ohmic behaviour under illumination. The photoresponse of the film was recorded at intervals of 100 s. The photocurrent increased under illumination and the current recovered to the original dark level when light was switched off. Under 100 s of illumination the photocurrent increased and became almost constant. This work presents a simple way to obtain photodetectors and will benefit in the manufacture of optoelectronic devices.
中文翻译:
(Cd:Zn)S薄膜的水热辅助化学浴沉积高光敏低暗电流
摘要 在这项工作中,我们观察了通过水热辅助化学浴沉积在玻璃基板上获得的高质量纳米晶三元薄膜。沉积已在 200 °C 下进行了 1 小时。本文列举了材料的合金化效应和光电性能以及结构、光学、形态和光致发光性能。通过 X 射线衍射 (XRD) 分析的结构特性表明,CdZnS 薄膜的六方相沿 (1 0 0) 面具有择优取向,平均晶粒尺寸为 28 nm。扫描电子显微镜 (SEM) 图像显示在薄膜上生长的纳米纤维簇。从使用 UV-Vis-NIR 光谱的光学吸收研究中获得的光学带隙为 2.98 eV。在使用 Fluromax-4Spectrofluorometer 记录的 PL 光谱中观察到来自本征点缺陷的广泛且不对称的发射。在 300 W/82 V 卤素灯的照明下,使用 Keithley SMU2450 四探针源测量单元研究薄膜的光电导率。在黑暗条件下,I-V 曲线表现出非线性行为,而薄膜在光照下表现出欧姆行为。以 100 秒的间隔记录胶片的光响应。光照下光电流增加,关灯后电流恢复到原来的暗水平。在 100 秒的光照下,光电流增加并变得几乎恒定。这项工作提供了一种获得光电探测器的简单方法,并将有益于光电器件的制造。
更新日期:2018-09-01
中文翻译:
(Cd:Zn)S薄膜的水热辅助化学浴沉积高光敏低暗电流
摘要 在这项工作中,我们观察了通过水热辅助化学浴沉积在玻璃基板上获得的高质量纳米晶三元薄膜。沉积已在 200 °C 下进行了 1 小时。本文列举了材料的合金化效应和光电性能以及结构、光学、形态和光致发光性能。通过 X 射线衍射 (XRD) 分析的结构特性表明,CdZnS 薄膜的六方相沿 (1 0 0) 面具有择优取向,平均晶粒尺寸为 28 nm。扫描电子显微镜 (SEM) 图像显示在薄膜上生长的纳米纤维簇。从使用 UV-Vis-NIR 光谱的光学吸收研究中获得的光学带隙为 2.98 eV。在使用 Fluromax-4Spectrofluorometer 记录的 PL 光谱中观察到来自本征点缺陷的广泛且不对称的发射。在 300 W/82 V 卤素灯的照明下,使用 Keithley SMU2450 四探针源测量单元研究薄膜的光电导率。在黑暗条件下,I-V 曲线表现出非线性行为,而薄膜在光照下表现出欧姆行为。以 100 秒的间隔记录胶片的光响应。光照下光电流增加,关灯后电流恢复到原来的暗水平。在 100 秒的光照下,光电流增加并变得几乎恒定。这项工作提供了一种获得光电探测器的简单方法,并将有益于光电器件的制造。