Carbon nanotube thin film transistor (CNT-TFT) is an emerging technology for future macroelectronics, such as chemical and biological sensors, optical detectors, and the backplane driving circuits for flat panel displays. The mostly reported fabrication method of CNT-TFT is a lift-off based photolithography process. In such fabrication process, photoresist (PR) residue contaminates the interface of tube-metal contact and deteriorates the device performance. In this paper, ultraviolet ozone (UVO) and oxygen plasma treatments were employed to remove the PR contamination. Through our well-designed experiments, the UVO treatment is confirmed an effective way of cleaning contamination at the tube-metal interface, while oxygen plasma treatment is too reactive and hard to control, which is not appropriate for CNT-TFTs. It is determined that 2–6 min UVO treatment is the preferred window, and the best optimized treatment time is 4 min, which leads to 15% enhancement of device performance.

碳纳米管薄膜晶体管 (CNT-TFT) 是未来宏电子学的新兴技术，例如化学和生物传感器、光学探测器以及平板显示器的背板驱动电路。报道最多的 CNT-TFT 制造方法是基于剥离的光刻工艺。在这种制造过程中，光刻胶 (PR) 残留物会污染管-金属接触界面并降低器件性能。在本文中，采用紫外线臭氧 (UVO) 和氧等离子体处理来去除 PR 污染。通过我们精心设计的实验，UVO 处理被证实是清洁管-金属界面污染物的有效方法，而氧等离子体处理反应性太强且难以控制，不适用于 CNT-TFT。