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Synthesis of platinum silicide at platinum/silicon oxide interface by photon irradiation
Acta Materialia ( IF 9.4 ) Pub Date : 2018-08-01 , DOI: 10.1016/j.actamat.2018.05.045
K. Sato , H. Yasuda , S. Ichikawa , M. Imamura , K. Takahashi , S. Hata , S. Matsumura , S. Anada , J.-G. Lee , H. Mori

Abstract The synthesis of platinum silicide at a Pt/SiOx interface by photon irradiation was investigated using transmission electron microscopy. A platinum silicide, Pt2Si, was successfully formed at the Pt/SiOx interface by irradiation with 680 and 140 eV photons, but not by irradiation with 80 eV photons. Silicide formation was also induced by irradiation with electrons of energy 75 keV. The amount of silicide formed by photon irradiation was lower than the amount obtained by electron irradiation. Silicide formation by both photon and electron irradiation was accompanied by Si depletion in amorphous SiOx. The experimental results indicate that silicide formation is induced by electronic excitation. A possible mechanism for silicide formation is proposed on the basis of the results.

中文翻译:

光子辐照在铂/氧化硅界面合成硅化铂

摘要 使用透射电子显微镜研究了通过光子照射在 Pt/SiOx 界面合成硅化铂。通过 680 和 140 eV 光子辐照,在 Pt/SiOx 界面成功形成铂硅化物 Pt2Si,但不能通过 80 eV 光子辐照。用能量为 75 keV 的电子辐照也诱导了硅化物的形成。通过光子照射形成的硅化物的量低于通过电子照射获得的量。通过光子和电子辐射形成的硅化物伴随着非晶 SiOx 中的 Si 耗尽。实验结果表明硅化物的形成是由电子激发引起的。根据结果​​提出了硅化物形成的可能机制。
更新日期:2018-08-01
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