It has been discussed for a long time that synthetic pressure can effectively optimize thermoelectric properties. The beneficial effect of synthesis pressures on thermoelectric properties has been discussed for a long time. In this paper, it is theoretically and experimentally demonstrated that appropriate synthesis pressures can increase the figure of merit (ZT) through optimizing thermal transport and electronic transport properties. Indium and barium atoms double-filled CoSb₃ samples were prepared use high-pressure and high-temperature technique for half an hour. X-ray diffraction and some structure analysis were used to reveal the relationship between microstructures and thermoelectric properties. In_0.15Ba_0.35Co₄Sb₁₂ samples were synthesized by different pressures; sample synthesized by 3 GPa has the best electrical transport properties, and sample synthesized by 2.5 GPa has the lowest thermal conductivity. The maximum ZT value of sample synthesized by 3.0 GPa reached 1.18.

中文翻译：

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通过高压调节增强CoSb ₃双填充的热电性能

长期以来，人们一直在讨论合成压力可以有效地优化热电性能。合成压力对热电性能的有益影响已经讨论了很长时间。本文在理论和实验上证明了适当的合成压力可以通过优化热传输和电子传输性能来提高品质因数（ZT）。铟和钡原子双填充CoSb ₃样品使用高压高温技术制备了半小时。X射线衍射和一些结构分析被用来揭示微观结构和热电性能之间的关系。In _0.15 Ba _0.35 Co ₄ Sb ₁₂通过不同的压力合成样品；3 GPa合成的样品具有最佳的电传输性能，而2.5 GPa合成的样品具有最低的导热率。通过3.0 GPa合成的样品的最大ZT值达到1.18。