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Oxidation of ß-SiC at high temperature in Ar/O2, Ar/CO2, Ar/H2O gas mixtures: Kinetic study of the silica growth in the passive regime
Journal of the European Ceramic Society ( IF 5.7 ) Pub Date : 2018-05-24 , DOI: 10.1016/j.jeurceramsoc.2018.05.029
Mathieu Q. Brisebourg , Francis Rebillat , Francis Teyssandier

The kinetics of silica growth during passive oxidation of SiC was studied using an original interferometric method carried out in a reactor specifically designed for that purpose. The influence of various oxidant species, O2, H2O, CO2 as well as their mixtures was investigated in a high temperature domain ranging from 1550 °C to 1850 °C at atmospheric pressure. This method is an efficient way to measure the various oxidation regimes usually described by the Deal-Grove model. Both the linear and parabolic rate constants are found to be independent of gas phase composition above 1700 °C, and to increase with oxygen partial pressure below 1700 °C for PO2 > 20 kPa. In the parabolic growth regime, we observed a transition from a low temperature interstitial-dominant to a high temperature network-dominant oxygen transport in the silica scale. The present results suggest the existence of a similar transition in the linear growth regime.



中文翻译:

在Ar / O 2,Ar / CO 2,Ar / H 2 O混合气体中高温下ß-SiC的氧化:钝态下二氧化硅生长的动力学研究

使用在专门为此目的设计的反应器中进行的原始干涉法研究了SiC被动氧化过程中二氧化硅生长的动力学。在大气压下从1550°C到1850°C的高温区域研究了各种氧化剂物质O 2,H 2 O,CO 2及其混合物的影响。这种方法是测量通常由Deal-Grove模型描述的各种氧化方式的有效方法。发现线性和抛物线速率常数均与1700°C以上的气相成分无关,并且对于P O2随氧分压低于1700°C而增加。 > 20 kPa。在抛物线生长机制中,我们观察到了二氧化硅尺度从低温间隙为主的氧迁移到高温网络为主的氧迁移。目前的结果表明线性增长机制中存在类似的过渡。

更新日期:2018-05-24
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