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Structure, phase composition, and some properties of melt grown GaSe:Er crystals
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2018-08-01 , DOI: 10.1016/j.jcrysgro.2018.05.024
E.B. Borisenko , A.V. Timonina , D.N. Borisenko , V.I. Nikolaichik , A.N. Tereshchenko , N.N. Kolesnikov

Abstract Powder and polycrystals synthesized from Ga, Se, Er components, as well as GaSe and GaSe:Er single crystals grown from melt in argon atmosphere and in vacuum, respectively, are studied. The growth and quenching conditions used in this work provide 2.5 times increase in solubility of erbium in GaSe matrix and a decrease in number of phases to GaSe and Er2Se3, oppositely to multiphase GaSe:Er alloys known from literature. For the first time Er2Se3 phase was detected by XRD in GaSe crystal doped with 1 at%Er. Possible orientation relations are derived for Er2Se3/GaSe epitaxial pair. It has been shown that stretched reflections in electron micro diffraction patterns and scattering of maximums in x-ray diffraction patterns are bound to stacking faults, which appear owing to thin interlayers of δ-GaSe polytype in e-GaSe matrix of the melt-grown crystals. Morphology of growing crystal surface is studied. Photoluminescence spectra of pure and erbium-doped GaSe display intense photoluminescence bands, which are, presumably, associated with defect states in band gap of GaSe. It is shown that doping with Er has a strong effect on photoluminescence intensity and on its spectral composition. The measured 1.7 times increase in Vickers microhardness (up to 400 MPa) with respect to pure GaSe is due to solid solution hardening and to precipitation.

中文翻译:

熔体生长的 GaSe:Er 晶体的结构、相组成和一些特性

摘要 研究了由 Ga、Se、Er 组分合成的粉末和多晶,以及分别在氩气氛和真空中由熔体生长的 GaSe 和 GaSe:Er 单晶。这项工作中使用的生长和淬火条件使铒在 GaSe 基体中的溶解度增加了 2.5 倍,并减少了 GaSe 和 Er2Se3 的相数,这与文献中已知的多相 GaSe:Er 合金相反。XRD 首次在掺杂 1 at%Er 的 GaSe 晶体中检测到 Er2Se3 相。Er2Se3/GaSe 外延对可能的取向关系被推导出来。已经表明,电子显微衍射图中的拉伸反射和 X 射线衍射图中最大值的散射与堆垛层错有关,其出现是由于熔体生长晶体的 e-GaSe 基质中的 δ-GaSe 多型薄夹层。研究了生长晶体表面的形态。纯和掺铒 GaSe 的光致发光光谱显示出强烈的光致发光带,这可能与 GaSe 带隙中的缺陷状态有关。结果表明,掺杂 Er 对光致发光强度及其光谱组成有很强的影响。与纯 GaSe 相比,维氏显微硬度增加了 1.7 倍(高达 400 MPa),这是由于固溶硬化和沉淀造成的。结果表明,掺杂 Er 对光致发光强度及其光谱组成有很强的影响。与纯 GaSe 相比,维氏显微硬度增加了 1.7 倍(高达 400 MPa),这是由于固溶硬化和沉淀造成的。结果表明,掺杂 Er 对光致发光强度及其光谱组成有很强的影响。与纯 GaSe 相比,维氏显微硬度增加了 1.7 倍(高达 400 MPa),这是由于固溶硬化和沉淀造成的。
更新日期:2018-08-01
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