Abstract We have synthesized Cu 2 Mg x Zn 1–x Sn(S,Se) 4 (0 ≤ x ≤ 0.6) thin films by a facile sol-gel method, and studied the influence of Mg concentration on the crystal structure, surface morphology and photoelectric performance of Cu 2 Mg x Zn 1–x Sn(S,Se) 4 thin films systematically. It was shown that the smaller Zn 2+ in Kesterite phase Cu 2 ZnSn(S,Se) 4 will be replaced by larger Mg 2+ , forming uniform pure phase Cu 2 Mg x Zn 1–x Sn(S,Se) 4 . The band gap of Cu 2 Mg x Zn 1–x Sn(S,Se) 4 films can be adjusted from 1.12 to 0.88 eV as the x value changes from 0 to 0.6. Furthermore, the Cu 2 Mg x Zn 1–x Sn(S,Se) 4 thin films with large grain size, smooth surface and less grain boundaries was obtained at an optimized condition of x = 0.2. The carrier concentration of Cu 2 Mg x Zn 1–x Sn(S,Se) 4 thin film reaches the maximum 6.47 × 10 18 cm −3 at x = 0.2, which is a potential material to be the absorption layer of high efficiency solar cells.

中文翻译：

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太阳能电池用环保富集黄铜矿Cu 2 Mg x Zn 1-x Sn(S,Se) 4 薄膜的合成与研究

摘要 我们采用简便的溶胶-凝胶法合成了 Cu 2 Mg x Zn 1-x Sn(S,Se) 4 (0 ≤ x ≤ 0.6) 薄膜，并研究了 Mg 浓度对晶体结构、表面形貌的影响。 Cu 2 Mg x Zn 1-x Sn(S,Se) 4 薄膜的光电性能和光电性能。结果表明，黄铜矿相Cu 2 ZnSn(S,Se) 4 中较小的Zn 2+ 将被较大的Mg 2+ 取代，形成均匀的纯相Cu 2 Mg x Zn 1-x Sn(S,Se) 4 。当 x 值从 0 变为 0.6 时，Cu 2 Mg x Zn 1-x Sn(S,Se) 4 薄膜的带隙可以从 1.12 调整到 0.88 eV。此外，在 x = 0.2 的优化条件下获得了具有大晶粒尺寸、光滑表面和较少晶界的 Cu 2 Mg x Zn 1-x Sn(S,Se) 4 薄膜。Cu 2 Mg x Zn 1-x Sn(S,Se) 4 薄膜的载流子浓度达到最大值6。