The crystal structure of a material has a large impact on the electronic and material properties such as band alignment, bandgap energy, and surface energies. Au‐seeded III–V nanowires are promising structures for exploring these effects, since for most III–V materials they readily grow in either wurtzite or zinc blende crystal structure. In III–Sb nanowires however, wurtzite crystal structure growth has proven difficult. Therefore, other methods must be developed to achieve wurtzite antimonides. For GaSb, theoretical predictions of the band structure diverge significantly, but the absence of wurtzite GaSb material has prevented any experimental verification of the properties. Having access to this material is a critical step toward clearing the uncertainty in the electronic properties, improving the theoretical band structure models and potentially opening doors toward application of this material. This work demonstrates the use of InAs wurtzite nanowires as templates for realizing GaSb wurtzite shell layers with varying thicknesses. The properties of the axial and radial heterointerfaces are studied at the atomic scale by means of aberration‐corrected scanning transmission electron microscopy, revealing their sharpness and structural quality. The transport characterizations point toward a positive offset in the valence bandedge of wurtzite compared to zinc blende.

中文翻译：

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使用InAs纳米线模板实现纤锌矿GaSb

材料的晶体结构对电子和材料特性（如能带排列，带隙能和表面能）有很大影响。含金的III–V纳米线是探索这些效应的有前途的结构，因为对于大多数III–V材料，它们很容易以纤锌矿或锌混合晶体结构生长。然而，在III–Sb纳米线中，纤锌矿晶体结构的生长已被证明是困难的。因此，必须开发其他方法来获得纤锌矿型锑化物。对于GaSb，能带结构的理论预测差异很大，但由于纤锌矿型GaSb材料的缺乏阻碍了对该特性的任何实验验证。获得这种材料是清除电子特性不确定性的关键一步，改进理论上的能带结构模型，并有可能为这种材料的应用打开大门。这项工作演示了使用InAs纤锌矿纳米线作为模板来实现厚度可变的GaSb纤锌矿壳层。通过像差校正扫描透射电子显微镜在原子尺度上研究了轴向和径向异质界面的性质，揭示了它们的清晰度和结构质量。与锌掺合物相比，传输特征指向纤锌矿的价带边缘正偏移。通过像差校正扫描透射电子显微镜在原子尺度上研究了轴向和径向异质界面的性质，揭示了它们的清晰度和结构质量。与锌掺合物相比，传输特征指向纤锌矿的价带边缘正偏移。通过像差校正扫描透射电子显微镜在原子尺度上研究了轴向和径向异质界面的性质，揭示了它们的清晰度和结构质量。与锌掺合物相比，传输特征指向纤锌矿的价带边缘正偏移。