Zinc‐tin oxide (ZTO) is widely invoked as a promising indium and gallium‐free alternative for amorphous oxide semiconductor based thin‐film transistors (TFTs). The main bottleneck of this semiconductor material compared to mainstream indium‐gallium‐zinc oxide (IGZO) is centered in the larger processing temperatures required to achieve acceptable performance (>300 °C), not compatible with low‐cost flexible substrates. This work reports for the first time flexible amorphous‐ZTO TFTs processed at a maximum temperature of 180 °C. Different aspects are explored to obtain performance levels comparable to IGZO devices at these low processing temperatures, such as hydrogen incorporation during ZTO sputtering and integration with a high‐κ multilayer/multicomponent dielectric. Close‐to‐zero turn‐on voltage, field‐effect mobility ≈5 cm² V⁻¹ s⁻¹, and subthreshold slope of 0.26 V dec⁻¹ are obtained. Stability under negative‐bias‐illumination stress is dramatically improved with hydrogen incorporation in ZTO and device performance is insensitive to bending under a radius of curvature of 15 mm. Inverters using the ZTO TFTs enable rail‐to‐rail operation with supply voltage V _DD as low as 5 V, while a differential amplifier with positive feedback loop provides a gain of 17 dB and unity gain frequency of 40 kHz, limited by the large gate‐to‐source and gate‐to‐drain overlaps used herein.

中文翻译：

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氧化锌锡薄膜晶体管在柔性电子领域的可持续发展方法

氧化锌锡（ZTO）被广泛用作基于非晶氧化物半导体的薄膜晶体管（TFT）的有希望的无铟和镓的替代品。与主流的铟镓锌氧化物（IGZO）相比，该半导体材料的主要瓶颈在于实现可接受性能（> 300°C）所需的更高处理温度，而不适合于低成本的柔性基板。这项工作首次报告了在最高温度为180°C的条件下加工的柔性非晶ZTO TFT。在这些低处理温度下，探索了各个方面以获得与IGZO器件相当的性能水平，例如ZTO溅射过程中的氢掺入以及与高κ多层/多组分电介质的集成。接近零的开启电压，场效应迁移率≈5cm^获得2 V ^-1 s ^-1，并且获得0.26 V dec ^-1的亚阈值斜率。通过在ZTO中加入氢，可以大大改善负偏压照明应力下的稳定性，并且器件性能对15 mm曲率半径下的弯曲不敏感。使用ZTO TFT的逆变器可在电源电压V _DD低至5 V的情况下实现轨到轨操作，而带正反馈环路的差分放大器可提供17 dB的增益和40 kHz的单位增益频率，这受大栅极限制本文使用的“源到源”和“栅极到漏极”交叠。