Abstract Silicon nanowire-based devices have properties such as optical, electronic, and physical that can outperform their traditional counterparts in various ways because the silicon nanowires (SiNWs) have a high surface Si area to volume ratio and unique quasi-one-dimensional (1D) electronic structure. A variety of approaches are being classified into top-down and bottom-up methods to fabricate SiNWs. The present work demonstrates the synthesis of porous SiNWs (PSiNWs) through the metal-assisted chemical etching (MACE). The MACE produces PSiNWs using an aqueous solution composed of hydrofluoric acid (HF) and hydrogen peroxide (H2O2). Effect of MACE parameters such as H2O2 concentration, etching time, and Si wafer resistivity variation on the morphological characteristics (especially length) of PSiNWs are compared and thoroughly discussed. The structure and morphology of PSiNWs are characterized by transmission electron microscopy (TEM), environmental scanning electron microscopy (ESEM), and X-ray diffraction (XRD). The XRD data show the PSiNWs crystal growth direction.

中文翻译：

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MACE 参数对多孔硅纳米线 (PSiNW) 长度的影响

摘要 基于硅纳米线的器件具有光学、电子和物理等特性，可以在各种方面优于传统对应物，因为硅纳米线 (SiNW) 具有较高的表面积与体积比和独特的准一维 (1D ) 电子结构。各种方法被分为自上而下和自下而上的方法来制造 SiNW。目前的工作证明了通过金属辅助化学蚀刻 (MACE) 合成多孔 SiNWs (PSiNWs)。MACE 使用由氢氟酸 (HF) 和过氧化氢 (H2O2) 组成的水溶液生产 PSiNW。比较并深入讨论了 MACE 参数（如 H2O2 浓度、蚀刻时间和硅晶片电阻率变化）对 PSiNW 的形态特征（尤其是长度）的影响。PSiNWs 的结构和形态通过透射电子显微镜 (TEM)、环境扫描电子显微镜 (ESEM) 和 X 射线衍射 (XRD) 进行表征。XRD 数据显示了 PSiNWs 晶体生长方向。