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Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X‐Ray Diffraction
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2018-05-16 , DOI: 10.1002/aelm.201800091
Min Hyuk Park 1 , Ching‐Chang Chung 2 , Tony Schenk 1 , Claudia Richter 1 , Karl Opsomer 3 , Christophe Detavernier 4 , Christoph Adelmann 3 , Jacob L. Jones 2 , Thomas Mikolajick 1, 5 , Uwe Schroeder 1
Affiliation  

The ferroelectricity in fluorite oxides has gained increasing interest due to its promising properties for multiple applications in semiconductor as well as energy devices. The structural origin of the unexpected ferroelectricity is now believed to be the formation of a non‐centrosymmetric orthorhombic phase with the space group of Pca21. However, the factors driving the formation of the ferroelectric phase are still under debate. In this study, to understand the effect of annealing temperature, the crystallization process of doped HfO2 thin films is analyzed using in situ, high‐temperature X‐ray diffraction. The change in phase fractions in a multiphase system accompanied with the unit cell volume increase during annealing could be directly observed from X‐ray diffraction analyses, and the observations give an information toward understanding the effect of annealing temperature on the structure and electrical properties. A strong coupling between the structure and the electrical properties is reconfirmed from this result.

中文翻译:

铁电HfO2薄膜退火的影响:原位高温X射线衍射

萤石氧化物中的铁电,由于其在半导体以及能源设备中的多种应用具有令人鼓舞的特性而受到越来越多的关注。现在认为,意外铁电的结构起源是形成具有Pca 2 1的空间群的非中心对称的正交相。然而,驱动铁电相形成的因素仍在争论中。在这项研究中,要了解退火温度的影响,掺杂HfO 2的结晶过程使用原位高温X射线衍射分析薄膜。可以从X射线衍射分析中直接观察到多相体系中相分数的变化以及退火过程中晶胞体积的增加,这些观察结果为理解退火温度对结构和电性能的影响提供了信息。从该结果可以确认结构与电性能之间的强耦合。
更新日期:2018-05-16
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