Recent advancements in organic field effect transistors have switched chemists’ focus from synthesizing libraries of organic semiconductors to a more targeted approach where chemical alterations are performed on known semiconductors to further improve electronic properties. Among successful semiconducting polymer candidates, copolymers based on diketopyrrolopyrrole-and thieno[3,2-b]thiophene [P(DPP-TT)] have been subjected to modifications on the diketopyrrolopyrrole unit by using flanking groups and side chain engineering. Thieno[3,2-b]thiophene moiety, however, has seen minimal modifications due to the limited number of modifying sites. Isoelectronic thieno[3,2-b]pyrrole could serve as an alternative since it is easily tunable via N-alkylation reactions. Therefore, for the first time, we report the replacement of the thieno[3,2-b]thiophene unit of P(DPP-TT) with thieno[3,2-b]pyrrole unit and its performance in p-channel field effect transistors. The copolymer exhibits linear characteristics to achieve a relatively high average hole mobility of 0.12 cm² V^–1 s^–1 in bottom-gate/top-contact field effect transistors with threshold voltages as low as 0 V. These preliminary results highlight the potential of this thieno[3,2-b]pyrrole monomer for utilization in organic field effect transistors.

中文翻译：

---

将噻吩并[3,2-b]吡咯掺入二酮吡咯并吡咯基共聚物中用于高效有机场效应晶体管

有机场效应晶体管的最新进展已将化学家的重点从合成有机半导体库转移到更有针对性的方法，其中对已知半导体进行化学改变以进一步改善电子特性。在成功的半导体聚合物候选物中，基于吡咯并吡咯二酮和噻吩并[3,2- b ]噻吩[ P(DPP-TT) ]的共聚物已经通过使用侧翼基团和侧链工程对吡咯并吡咯二酮单元进行了修饰。然而，由于修饰位点数量有限，噻吩并[3,2- b ]噻吩部分的修饰很少。等电子噻吩[3,2- b]吡咯可以作为替代品，因为它可以通过 N-烷基化反应轻松调节。因此，我们首次报道了用噻吩并[3,2-b]吡咯单元替代P (DPP-TT)的噻吩并[3,2 - b ]噻吩单元及其在p沟道场效应中的表现晶体管。该共聚物表现出线性特性，可在阈值电压低至 0 V 的底栅/顶接触场效应晶体管中实现 0.12 cm ² V ^–1 s ^–1的相对较高的平均空穴迁移率。这些初步结果突出了这种用于有机场效应晶体管的噻吩并[3,2- b ]吡咯单体。