The Mott transistor is a paradigm for a new class of electronic devices—often referred to by the term Mottronics—which are based on charge correlations between the electrons. Since correlation‐induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the metal–insulator transition to be switched by electric gating. Here, it is demonstrated that thin films of the prototypical Mott insulator LaTiO₃ grown by pulsed laser deposition under oxygen atmosphere are readily tuned by excess oxygen doping across the line of the band‐filling controlled Mott transition in the electronic phase diagram. The detected insulator to metal transition is characterized by a strong change in resistivity of several orders of magnitude. The use of suitable substrates and capping layers to inhibit oxygen diffusion facilitates full control of the oxygen content and renders the films stable against exposure to ambient conditions. These achievements represent a significant advancement in control and tuning of the electronic properties of LaTiO_3+x thin films making it a promising channel material in future Mottronic devices.

中文翻译：

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Mottronics量身定制的材料：典型的Mott绝缘子的过量氧掺杂

莫特晶体管是一类新型电子设备的典范，通常基于电子之间的电荷相关性，这类电子设备通常被称为Mottronics。由于大多数氧化物化合物的相关诱导绝缘相通常非常坚固，因此必须开发新方法将这些材料推向金属相的边界，以使金属-绝缘体的转变能够通过电浇注进行切换。在此，证明了典型的莫特绝缘子LaTiO _3的薄膜氧气氛下通过脉冲激光沉积产生的碳很容易通过电子相图中跨谱带填充的受控Mott跃迁线的过量氧掺杂进行调谐。检测到的绝缘体到金属的过渡的特征是电阻率发生了几个数量级的强烈变化。使用合适的基底和覆盖层来抑制氧的扩散有利于氧含量的完全控制，并使膜在暴露于环境条件下稳定。这些成就代表了在控制和调节LaTiO _{3+ x}薄膜的电子特性方面的重大进步，使其成为未来Mottronic器件中有希望的通道材料。