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Assessing the growth window of stannous oxide by ion beam sputter deposition (IBSD)
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2018-09-01 , DOI: 10.1016/j.jcrysgro.2018.05.009
M. Becker , F. Michel , A. Polity , P.J. Klar

Abstract SnO x films were fabricated on soda-lime glass and sapphire substrates by reactive ion beam sputter deposition (IBSD). A detailed growth series on c -plane sapphire was prepared using heater temperatures from room temperature to 600 ° C with different oxygen-to-argon ratios to investigate the impact of those parameters on thin film characteristics. By applying X-ray diffraction analysis and Raman spectroscopy an operating window was defined, in which SnO was grown without inclusions of parasitic Sn-related phases. The chemical bonding of the films was examined by X-ray photoelectron spectroscopy (XPS). Only a very narrow regime of oxygen flux was found with a composition close to stoichiometry. Furthermore, variation of the composition in SnO 1 ± δ as well as the growth temperature were found to influence the morphology of the grown layer. The surface morphology was investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). An average grain size of ≈ 10 –50 nm was revealed for films grown at 200 ° C, which increases for annealed samples and samples grown at elevated temperatures. In addition to the expected influence on grain growth and surface roughness, disintegration of the SnO crystallites was found for inappropriate oxygen flux and heater temperature, giving way to incorporation of Sn or SnO 2 species.

中文翻译:

通过离子束溅射沉积 (IBSD) 评估氧化亚锡的生长窗口

摘要 通过反应离子束溅射沉积 (IBSD) 在钠钙玻璃和蓝宝石衬底上制备了 SnO x 薄膜。使用从室温到 600°C 的加热器温度和不同的氧与氩比制备了 c 面蓝宝石上的详细生长系列,以研究这些参数对薄膜特性的影响。通过应用 X 射线衍射分析和拉曼光谱,定义了一个操作窗口,其中 SnO 的生长没有包含与 Sn 相关的寄生相。通过X射线光电子能谱(XPS)检查薄膜的化学键合。仅发现非常窄的氧通量范围,其组成接近化学计量。此外,发现 SnO 1 ± δ 中成分的变化以及生长温度会影响生长层的形态。通过扫描电子显微镜(SEM)和原子力显微镜(AFM)研究表面形貌。对于在 200 °C 下生长的薄膜,显示出 ≈ 10 –50 nm 的平均晶粒尺寸,对于退火样品和在升高的温度下生长的样品,平均晶粒尺寸会增加。除了对晶粒生长和表面粗糙度的预期影响之外,还发现不适当的氧通量和加热器温度会导致 SnO 微晶分解,从而导致 Sn 或 SnO 2 物质的掺入。
更新日期:2018-09-01
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