The Rochow process is the most common technology used to prepare organosilicon compounds on an industrial scale, and yet the mechanism is still not well understood. It involves the reaction of methyl chloride (CH₃Cl) with silicon, catalyzed by copper. To understand the elementary steps of the reaction involved, we studied the molecular adsorption of CH₃Cl/Cu(410) at 100 K and its complete desorption at higher temperatures, 100 K < T_D < 200 K. Temperature-programmed desorption (TPD) spectra show two CH₃Cl desorption peaks. We attribute the low temperature TPD peak (T_D ≈ 120 K) to CH₃Cl desorbing from both step-edges and terraces and the high temperature TPD peak (T_D ≈ 160 K) to CH₃Cl desorbing from the step-edges. Infrared reflection–absorption spectra (IRAS) indicate that at low CH₃Cl coverage (Θ = 0.06 ML), CH₃Cl adsorbs with its molecular axis (Cl–C bond) aligned either parallel or perpendicular to [001]. At high CH₃Cl coverage (Θ ≥ 0.09 ML), CH₃Cl adsorbs with its molecular axis aligned perpendicular to [001].

中文翻译：

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CH ₃ Cl / Cu（410）：相互作用和吸附几何

Rochow工艺是用于工业规模制备有机硅化合物的最常用技术，但其机理仍未得到很好的理解。它涉及由铜催化的氯甲烷（CH ₃ Cl）与硅的反应。为了了解反应的基本步骤，我们研究了CH ₃ Cl / Cu（410）在100 K下的分子吸附以及在100 K < T _D <200 K的更高温度下的完全脱附。光谱显示了两个CH ₃ Cl解吸峰。我们认为低温TPD峰（Ť _d ≈120 K），以CH ₃从两个步骤-边缘和台面和高温峰TPD（CL解吸Ť _d ≈160 K），以CH ₃ CL从工序边缘解吸。红外反射吸收光谱（IRAS）表明，在低CH ₃ Cl覆盖率（Θ= 0.06 ML）下，CH ₃ Cl的分子轴（Cl-C键）平行或垂直于[001]吸附。在高CH ₃ Cl覆盖率（Θ≥0.09 ML）下，CH ₃ Cl吸附时其分子轴垂直于[001]。