Reducing non-radiative recombination in semiconducting materials is a prerequisite for achieving the highest performance in light-emitting and photovoltaic applications. Here, we characterize both external and internal photoluminescence quantum efficiency and quasi-Fermi-level splitting of surface-treated hybrid perovskite (CH₃NH₃PbI₃) thin films. With respect to the material bandgap, these passivated films exhibit the highest quasi-Fermi-level splitting measured to date, reaching 97.1 ± 0.7% of the radiative limit, approaching that of the highest performing GaAs solar cells. We confirm these values with independent measurements of internal photoluminescence quantum efficiency of 91.9 ± 2.7% under 1 Sun illumination intensity, setting a new benchmark for these materials. These results suggest hybrid perovskite solar cells are inherently capable of further increases in power conversion efficiency if surface passivation can be combined with optimized charge carrier selective interfaces.

减少半导体材料中的非辐射复合是在发光和光伏应用中实现最高性能的先决条件。在这里，我们表征了表面处理的杂化钙钛矿（CH ₃ NH ₃ PbI _3）的外部和内部光致发光量子效率以及准费米能级分裂。）薄膜。就材料带隙而言，这些钝化膜表现出迄今为止测量的最高准费米能级分裂，达到辐射极限的97.1±0.7％，接近性能最高的GaAs太阳能电池。我们通过在1个太阳照射强度下独立测量内部光致发光量子效率为91.9±2.7％来确认这些值，为这些材料树立了新的标杆。这些结果表明，如果可以将表面钝化与优化的电荷载流子选择界面结合起来，则混合钙钛矿太阳能电池固有地能够进一步提高功率转换效率。