Graphene and graphene‐like 2D layered materials such as black phosphorus, transition‐metal dichalcogenides, oxides, chalcogenides, and so forth have attracted tremendous attention due to their unique crystal structures, mechanical, and physical properties, as well as their variable bandgaps that range from 0 to 6 eV, which have offered their utilization in versatile devices. Using these materials as the active channel, many novel electrical and optoelectronic devices have been reported. Among the various important devices applications, photodetectors based on 2D materials have been extensively investigated with varied performance due to the different species and detection mechanisms. Here, the methods to improve the performance of 2D‐material‐based photodetectors are reviewed. There are five kinds of strategies regarding methods, including surface plasmon enhancement, charge‐transfer assistance, optical‐waveguide integration, graphene sandwiched structures, and heterostructures directly grown by CVD, which are developed and widely reported in recent years. For each method, the device design, performance, and mechanism are introduced and discussed systematically. Finally, a summary is provided to afford the principle to further enhance the performance of photodetectors based on 2D materials, with a perspective for their practical applications in the future.

中文翻译：

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面向基于二维材料的高性能光电探测器：方法策略

石墨烯和类似石墨烯的2D层状材料，例如黑磷，过渡金属二硫化碳，氧化物，硫属元素化物等，由于其独特的晶体结构，机械和物理特性以及可变的带隙而引起了极大的关注。从0到6 eV，已经在多功能设备中得到了应用。使用这些材料作为有源通道，已经报道了许多新颖的电气和光电设备。在各种重要的设备应用中，由于种类和检测机制的不同，已经广泛研究了基于2D材料的光电探测器，其性能各不相同。在此，对提高基于2D材料的光电探测器性能的方法进行了综述。有关方法的策略有五种，包括表面等离激元增强，电荷转移辅助，光波导集成，石墨烯夹心结构和通过CVD直接生长的异质结构，这些都是近年来得到发展和广泛报道的。对于每种方法，系统地介绍和讨论了设备的设计，性能和机制。最后，提供摘要以提供原理，以进一步增强基于2D材料的光电探测器的性能，并展望其在未来的实际应用。