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Study and development of rear‐emitter Si heterojunction solar cells and application of direct copper metallization
Progress in Photovoltaics ( IF 6.7 ) Pub Date : 2018-03-23 , DOI: 10.1002/pip.3000
Lifei Yang 1, 2 , Sihua Zhong 2 , Wenbin Zhang 1 , Xingbing Li 1 , Zhengping Li 2 , Yufeng Zhuang 2 , Xin Wang 2 , Lei Zhao 3, 4 , Xinmin Cao 5 , Xunming Deng 5 , Qi Wang 1 , Wenzhong Shen 2, 6
Affiliation  

We have presented a comprehensive study on the development of rear emitter silicon heterojunction (SHJ) solar cells, which shows more freedom for device optimization than the standard front emitter SHJ counterparts. The optimization of the p‐type hydrogenated amorphous silicon (a‐Si:H(p)) layer is liberated from the parasitic absorption issue, while the n‐type hydrogenated amorphous silicon (a‐Si:H(n)) layer is optimized considering the tradeoff between the light absorption loss and field‐effect passivation. The front transparent conductive oxide (TCO) layer can be designed stressing on its optical properties because the lateral transport of the majority carriers at the front side of the cell is supported by the Si substrate, while the rear TCO layer is free to be tuned for suppressing the TCO/a‐Si:H(p) contact resistance. A rear emitter SHJ solar cell (225.47 cm2) fabricated by industry compatible process has been achieved with an efficiency of over 22%. We have further demonstrated the replacement of screen‐printed silver metallization with a low cost direct copper metallization in the rear emitter SHJ solar cells. We report an exciting 22.06% cell efficiency which is comparable to that of the screen‐printed counterpart.

中文翻译:

后发射硅异质结太阳能电池的研究与开发及直接铜金属化的应用

我们已经对后发射极硅异质结(SHJ)太阳能电池的开发进行了全面的研究,与标准的前发射极SHJ同类产品相比,它显示了器件优化方面的更多自由。从寄生吸收问题中解放了对p型氢化非晶硅(a-Si:H(n))层的优化,而对n型氢化非晶硅(a-Si:H(n))层进行了优化。考虑光吸收损耗和场效应钝化之间的权衡。可以设计前透明导电氧化物(TCO)层,以强调其光学性能,因为硅正面支撑了电池正面的多数载流子的横向传输,而后TCO层则可以随意调整抑制TCO / a-Si:H(p)的接触电阻。2)通过行业兼容的工艺制造的效率已超过22%。我们进一步证明了在背发射极SHJ太阳能电池中用低成本的直接铜金属化代替丝网印刷的银金属化。我们报告了令人兴奋的22.06%电池效率,与丝网印刷的同类产品相当。
更新日期:2018-03-23
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