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Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell
Progress in Photovoltaics ( IF 6.7 ) Pub Date : 2018-04-15 , DOI: 10.1002/pip.3012
Raphael Edem Agbenyeke 1, 2 , Soomin Song 3 , Bo Keun Park 1, 2 , Gun Hwan Kim 1 , Jae Ho Yun 3 , Taek-Mo Chung 1, 2 , Chang Gyoun Kim 1, 2 , Jeong Hwan Han 1, 4
Affiliation  

Ternary zinc tin oxide (ZTO) is one of the few environmental compatible buffer materials with the potential of replacing the n‐CdS buffer in Cu(In,Ga)Se2 (CIGS) solar cells and other photovoltaic systems once its properties are fully understood and optimized. In this work, ZTO films were grown by atomic layer deposition and were logically characterized with the aim of understanding the correlations between compositional changes and film properties. The ZnO:SnO2 pulse ratio significantly affected the growth rate, crystal structure, morphology, and band gap of the ZTO films. By controlling the Sn/(Sn + Zn) atomic ratio, the optical band gap of the ZTO films was tuned between 3.05 and 3.36 eV. Integrating the ZTO films as buffer layers in CIGS solar cells, we observed that films with Sn concentrations of 9 to 16 at.% yielded photo‐conversion efficiency close to 14%, which was very comparable to efficiency attained with the commonly used CdS buffer. Furthermore, using X‐ray photoelectron spectroscopy analysis, we correlated the current‐voltage behavior of the cells to the conduction band offset at the ZTO/ CIGS interface.

中文翻译:

用于高效Cu(In,Ga)Se2太阳能电池的原子层沉积ZnxSn1-xO缓冲带隙工程

三元氧化锌锡(ZTO)是为数不多的环保兼容缓冲材料之一,一旦其特性得到充分了解,就有可能取代Cu(In,Ga)Se 2(CIGS)太阳能电池和其他光伏系统中的n -CdS缓冲材料和优化。在这项工作中,ZTO膜是通过原子层沉积法生长的,并在逻辑上进行了表征,目的是理解成分变化与膜性能之间的关系。ZnO:SnO 2脉冲比显着影响ZTO薄膜的生长速率,晶体结构,形态和带隙。通过控制Sn /(Sn + Zn)原子比,ZTO薄膜的光学带隙可调节在3.05和3.36 eV之间。将ZTO薄膜集成为CIGS太阳能电池中的缓冲层,我们观察到Sn浓度为9至16 at。%的薄膜产生的光转换效率接近14%,这与常用的CdS缓冲剂所获得的效率非常可比。此外,使用X射线光电子能谱分析,我们将电池的电流-电压行为与ZTO / CIGS界面处的导带偏移相关联。
更新日期:2018-04-15
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