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Parallel boron nitride nanoribbons and etch tracks formed through catalytic etching
Nano Research ( IF 9.9 ) Pub Date : 2018-04-28 , DOI: 10.1007/s12274-018-2076-y
Armin Ansary , Mohsen Nasseri , Mathias J. Boland , Douglas R. Strachan

One-dimensional (1D) catalytic etching was investigated in few-layer hexagonal boron nitride (hBN) films. Etching of hBN was shown to share a number of similarities with that of graphitic films. As in graphitic films, etch tracks in hBN commenced at film edges and occurred predominantly along certain crystal directions of its lattice, though it was shown that the tracks were generally narrower than those of few-layer graphene under similar processing conditions. It was also shown that catalytic hydrogenation can occur completely through a few-layer hBN film, demonstrating that this process can be used in the formation of isolated low-dimensional nanoscale structures from other layered 2D materials beyond graphene. This ability for thin hBN films to be etched completely through allowed for a crystalline substrate to guide the etching process, which was demonstrated with the successful etch track formation of few-layer hBN on single-crystalline sapphire substrates. The substrate-guided etching resulted in parallel few-layer hBN nanoribbons having an average width of 32 nm and spacing of 13 nm.

中文翻译:

平行氮化硼纳米带和通过催化蚀刻形成的蚀刻轨迹

在几层六方氮化硼(hBN)膜中研究了一维(1D)催化蚀刻。已证明hBN的蚀刻与石墨膜具有许多相似之处。与石墨膜一样,hBN中的蚀刻轨迹始于膜边缘,并且主要沿其晶格的某些晶体方向发生,尽管已表明,在相似的处理条件下,该轨迹通常比几层石墨烯的轨迹更窄。还显示出催化氢化可完全通过几层hBN膜发生,表明该过程可用于与石墨烯以外的其他2D层状材料形成分离的低维纳米级结构。这种hBN薄膜被完全蚀刻的能力允许结晶衬底引导蚀刻过程,通过在单晶蓝宝石衬底上成功形成几层hBN的蚀刻轨迹证明了这一点。基板引导的蚀刻导致平行的几层hBN纳米带的平均宽度为32 nm,间距为13 nm。
更新日期:2018-08-10
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