As silicon carbide (SiC) is an inert material, it has attracted attention as an alternative material for the core components of nuclear fuel cladding. However, the corrosion of SiC under neutron irradiation has been reported, and this has been a bottleneck issue. Here, we semi-quantitatively introduced point defects into single crystal 3C-SiC layers by ion irradiation, and investigated their corrosion behavior in terms of the electrochemical activity associated with the point defects. The results showed a shift in corrosion potential and an increase in the corrosion current due to the introduction of defects. However, in the case of aluminum (Al)-doped SiC, these changes were more moderate than in the cases of the nitrogen (N)- or boron (B)-doped material, implying that Al-doped SiC has a better tolerance against corrosion.

由于碳化硅（SiC）是一种惰性材料，因此作为核燃料包壳核心部件的替代材料引起了人们的关注。然而，已经报道了在中子辐照下SiC的腐蚀，这已经成为瓶颈问题。在这里，我们通过离子照射将点缺陷半定量地引入到单晶3C-SiC层中，并根据与点缺陷相关的电化学活性研究了它们的腐蚀行为。结果表明，由于引入了缺陷，腐蚀电位发生了变化，腐蚀电流增加了。但是，在掺铝（SiC）的情况下，这些变化比掺氮（B）或硼（B）的材料更适中，这表明掺铝的SiC具有更好的耐受性。腐蚀。