当前位置: X-MOL 学术Sol. Energy › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
High-field magnetotransport in Cu2ZnGeS4 single crystals
Solar Energy ( IF 6.7 ) Pub Date : 2018-04-26
Elena Hajdeu-Chicarosh, Erkki Lähderanta, Maxim Guc, Konstantin Lisunov, Mikhail Shakhov, Ivan Zakharchuk, Serghei Levcenko, Ernest Arushanov

The quaternary chalcogenides, attracting much attention in recent time as promising solar energy materials, permit an effective optimization of their composition by the Ge incorporation. In particular, this implies an interest to the Cu2ZnGeS4 compound, which utilization requires, however, a deeper understanding of its electronic properties in general. Here, we investigate magnetotransport of the p-type Cu2ZnGeS4 single crystals, including resistivity, ρ (T), magnetoresistance (MR) and Hall effect, in pulsed magnetic fields up to B = 20 T. The Mott variable-range hopping charge transfer has been established within a broad temperature interval of T between ∼100 and 200 K by investigations of ρ (T) in zero field. The positive and negative contributions to MR have been observed, attributing them to shrinkage of the impurity wave functions by the magnetic field and to the destructive interference of the hopping charge carriers, respectively. Observation of the negative Hall coefficient, RH (T), exhibiting the dependence close to that of ρ (T), gives a strong support to the Mott conduction mechanism in our p-type Cu2ZnGeS4 material. In addition, the conductivity, connected with thermal activation of holes on the mobility edge, Ec, has been identified both below and above the Mott conduction interval. Finally, the joint analysis of the ρ (T) and MR data has yielded a series of important microscopic parameters. These include such details of the hole spectrum in the acceptor band, as its semi-width, W, the density of localized states, g (μ), at the Fermi level, μ, the positions of μ and Ec, as well as values of the localization radius of holes, a, and of the acceptor concentration, NA.



中文翻译:

Cu 2 ZnGeS 4单晶中的高场磁传输

季硫族化物作为有前途的太阳能材料在最近引起了广泛的关注,通过掺入Ge可以有效地优化其组成。特别地,这暗示了对Cu 2 ZnGeS 4化合物的兴趣,然而,使用该化合物通常需要对其电子性质有更深入的了解。在这里,我们研究了在高达B  = 20 T的脉冲磁场中,p型Cu 2 ZnGeS 4单晶的磁输运,包括电阻率,ρ(T),磁阻(MR)和霍尔效应。Mott变程跳变在较宽的温度范围内建立了电荷转移通过研究零场中的ρ(T)可以得出T介于100到200 K之间。已观察到对MR的正和负贡献,分别将它们归因于磁场引起的杂质波函数的收缩和跳跃电荷载流子的破坏性干扰。霍尔系数R HT)的观察显示出接近于ρ(T)的依赖性,这为我们的p型Cu 2 ZnGeS 4材料的Mott传导机制提供了有力的支持。此外,导电性与流动性边缘E上的孔的热激活有关在Mott导通间隔的下方和上方均已确定c。最后,对ρ(T)和MR数据的联合分析得出了一系列重要的微观参数。这些包括受体带中空穴谱的详细信息,如半宽度W,费米能级的局部态密度g(μ),μ,μ和E c的位置,以及孔的定位半径a的值和受体浓度N A的值

更新日期:2018-04-27
down
wechat
bug