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Silicon Mie resonators for highly directional light emission from monolayer MoS 2
Nature Photonics ( IF 35.0 ) Pub Date : 2018-04-23 , DOI: 10.1038/s41566-018-0155-y
Ahmet Fatih Cihan , Alberto G. Curto , Søren Raza , Pieter G. Kik , Mark L. Brongersma

Controlling light emission from quantum emitters has important applications, ranging from solid-state lighting and displays to nanoscale single-photon sources. Optical antennas have emerged as promising tools to achieve such control right at the location of the emitter, without the need for bulky, external optics. Semiconductor nanoantennas are particularly practical for this purpose because simple geometries such as wires and spheres support multiple, degenerate optical resonances. Here, we start by modifying Mie scattering theory developed for plane wave illumination to describe scattering of dipole emission. We then use this theory and experiments to demonstrate several pathways to achieve control over the directionality, polarization state and spectral emission that rely on a coherent coupling of an emitting dipole to optical resonances of a silicon nanowire. A forward-to-backward ratio of 20 was demonstrated for the electric dipole emission at 680 nm from a monolayer MoS2 by optically coupling it to a silicon nanowire.



中文翻译:

硅Mie谐振器,用于从单层MoS 2发出高度定向的光

控制从量子发射器发出的光具有重要的应用,范围从固态照明和显示器到纳米级单光子源。光学天线已经成为一种有前途的工具,可以在发射器的位置实现这种控制,而无需笨重的外部光学器件。半导体纳米天线为此特别实用,因为简单的几何形状(例如导线和球体)支持多种简并的光学共振。在这里,我们首先修改为平面波照明开发的Mie散射理论,以描述偶极子发射的散射。然后,我们使用这一理论和实验来说明实现方向性控制的几种途径,极化状态和光谱发射取决于发射偶极子与硅纳米线光学共振的相干耦合。单层MoS在680 nm处的电偶极子发射的前后比为202通过将其光学地耦合到一个硅纳米线。

更新日期:2018-04-24
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