当前位置: X-MOL 学术J. Phys. Chem. C › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Chemical Instability of an Interface between Silver and Bi2Se3 Topological Insulator at Room Temperature
The Journal of Physical Chemistry C ( IF 3.7 ) Pub Date : 2018-04-19 00:00:00 , DOI: 10.1021/acs.jpcc.8b01543
Katja Ferfolja 1 , Matjaz Valant 1, 2 , Iuliia Mikulska 3 , Sandra Gardonio 1 , Mattia Fanetti 1
Affiliation  

Understanding an interaction at an interface between a topological insulator and a metal is of critical importance when designing electronic and spintronic devices or when such systems are used in catalysis. In this paper, we report on a chemical instability of the interface between Bi2Se3 and Ag studied by X-ray powder diffraction and electron microscopy. We present strong experimental evidence of a redox solid-state reaction occurring at the interface with kinetics that is significant already at room temperature. The reaction yields Ag2Se, AgBiSe2, and Bi. The unexpected room-temperature chemical instability of the interface should be considered for all future theoretical and applicative studies involving the interface between Bi2Se3 and Ag.

中文翻译:

银和Bi 2 Se 3拓扑绝缘体之间的界面在室温下的化学不稳定性

在设计电子和自旋电子设备或将此类系统用于催化时,了解拓扑绝缘体和金属之间的界面处的相互作用至关重要。在本文中,我们通过X射线粉末衍射和电子显微镜研究了Bi 2 Se 3和Ag之间的界面化学不稳定性。我们提供了强有力的实验证据,证明氧化还原固态反应发生在室温下已经很显着的动力学界面上。反应产生Ag 2 Se,AgBiSe 2和Bi。涉及Bi之间的界面的所有未来理论和应用研究都应考虑界面的意外室温化学不稳定性2 Se 3和Ag。
更新日期:2018-04-19
down
wechat
bug