Graphite carbon nitride (g‐C₃N₄) is a promising candidate for photocatalytic hydrogen production, but only shows moderate activity owing to sluggish photocarrier transfer and insufficient light absorption. Herein, carbon quantum dots (CQDs) implanted in the surface plane of g‐C₃N₄ nanotubes were synthesized by thermal polymerization of freeze‐dried urea and CQDs precursor. The CQD‐implanted g‐C₃N₄ nanotubes (CCTs) could simultaneously facilitate photoelectron transport and suppress charge recombination through their specially coupled heterogeneous interface. The electronic structure and morphology were optimized in the CCTs, contributing to greater visible light absorption and a weakened barrier of the photocarrier transfer. As a result, the CCTs exhibited efficient photocatalytic performance under light irradiation with a high H₂ production rate of 3538.3 μmol g⁻¹ h⁻¹ and a notable quantum yield of 10.94 % at 420 nm.

中文翻译：

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碳量子点注入石墨氮化碳纳米管：出色的电荷分离和增强的光催化氢生成

石墨碳氮化物（g-C ₃ N ₄）是光催化制氢的有希望的候选者，但由于光载流子传输缓慢和光吸收不足，因此仅显示中等活性。在此，通过冷冻干燥的尿素和CQDs前体的热聚合合成了植入g-C ₃ N ₄纳米管表面的碳量子点（CQDs）。CQD植入的g‐C ₃ N ₄碳纳米管（CCT）可以同时促进光电子传输并通过其特殊耦合的异质界面抑制电荷复合。在CCT中优化了电子结构和形态，有助于更大的可见光吸收和减弱的光载流子传输势垒。结果，CCT在光照射下表现出有效的光催化性能，具有3538.3μmolg ^-1  h ^-1的高H ₂产生速率和在420nm下的显着的量子产率为10.94％。