Photoanodes based on In₂S₃/ZnO heterojunction nanosheet arrays (NSAs) have been fabricated by atomic layer deposition of ZnO over In₂S₃ NSAs, which were in situ grown on fluorine-doped tin oxide glasses via a facile solvothermal process. The as-prepared photoanodes show dramatically enhanced performance for photoelectrochemical (PEC) water splitting, compared to single semiconductor counterparts. The optical and PEC properties of In₂S₃/ZnO NSAs have been optimized by modulating the thickness of the ZnO overlayer. After pairing with ZnO, the NSAs exhibit a broadened absorption range and an increased light absorptance over a wide wavelength region of 250–850 nm. The optimized sample of In₂S₃/ZnO-50 NSAs shows a photocurrent density of 1.642 mA cm⁻² (1.5 V vs. RHE) and an incident photon-to-current efficiency of 27.64% at 380 nm (1.23 V vs. RHE), which are 70 and 116 times higher than those of the pristine In₂S₃ NSAs, respectively. A detailed energy band edge analysis reveals the type-II band alignment of the In₂S₃/ZnO heterojunction, which enables efficient separation and collection of photogenerated carriers, especially with the assistance of positive bias potential, and then results in the significantly increased PEC activity.

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基于在光阳极₂小号₃ /氧化锌纳米片异质结阵列（体育总会）已经通过在ZnO中的原子层沉积制造₂小号₃ 体育总会，这是在原位上生长掺氟的氧化锡玻璃经由一个容易溶剂热过程。与单个半导体同行相比，所制备的光阳极在光电化学（PEC）水分解方面显示出显着增强的性能。In ₂ S ₃的光学和PEC特性/ ZnO NSA已通过调节ZnO覆盖层的厚度进行了优化。与ZnO配对后，NSA在250-850 nm的宽波长区域内表现出更宽的吸收范围和更高的吸光率。In ₂ S ₃ / ZnO-50 NSA的优化样品显示光电流密度为1.642 mA cm ^-2（1.5 V对RHE），在380 nm处的入射光子电流效率为27.64％（1.23 V对RHE）。 RHE），分别比原始In ₂ S ₃ NSA高70倍和116倍。详细的能带边缘分析揭示了In ₂ S ₃的II型能带对准/ ZnO异质结，可有效分离和收集光生载流子，尤其是在正偏置电势的辅助下，然后可显着提高PEC活性。

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